标题 |
专利、报告等 Three terminal fuse with FinFET
带FinFET的三端保险丝
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网址 |
求助人暂未提供
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DOI |
暂未提供,该求助的时间将会延长,查看原因?
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其它 | A technique is provided for programming a transistor having a source, a drain, a gate, and a channel region between the source and the drain. The gate is above dielectric above the channel region. A gate voltage is about equal to or greater than a breakdown voltage of the gate dielectric in order to break down the gate dielectric into a breakdown state. Current flows between the source and the drain as a result of breaking down the gate dielectric. In response to the transistor being programmed, the |
求助人 | |
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