标题 |
Enhanced Synaptic Memory Window and Linearity in Planar In2Se3 Ferroelectric Junctions
平面In2Se3铁电结的增强突触记忆窗口和线性
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其它 |
期刊:Advanced Materials 作者:Yu‐Rim Jeon; Dongyoon Kim; Chandan Biswas; Nicholas D Ignacio; Patrick Carmichael; et al 出版日期:2024 |
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