| 标题 |
Processing-in-Memory Accelerator Design with a Fully Synthesizable Cell-based DRAM
具有完全可合成的基于单元的DRAM的存储器内处理加速器设计
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| 网址 | |
| DOI |
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| 其它 |
PROCESSING-IN-MEMORY ACCELERATOR DESIGN WITH A FULLY SYNTHESIZABLE CELL-BASED DRAM Presenter: Tai-feng Chen, Nagoya University, JP Authors: Tai-feng Chen, Yutaka Masuda and Tohru Ishihara, Nagoya University, JP Abstract Processing-in-Memory (PiM) is one of the most promising design techniques for applications like AI accelerators that require both high performance and energy efficiency. Since AI algorithms and their accelerator models are evolving rapidly, the biggest challenge of AI chip design is to synthesize high-performance and highly energy-efficient accelerators rapidly. In this research project, we develop fully synthesizable cell-based DRAMs to address this challenge, where the gain cell structure is adopted as a bit cell storage with a specifically designed circuit structure to enable near-threshold voltage operation. |
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