标题 |
More than 1200 V Breakdown and Low Area-Specific On-State Resistances by Progress in Lateral GaN-on-Si and GaN-on-Insulator Technologies
通过横向硅上GaN-on-Si和绝缘体上GaN-on-Si技术的进步,超过1200 V击穿和低面积特定导通电阻
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其它 | PCIM Europe 2024, Publisher: VDE |
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