Effect of specularity parameter and convective coefficient on heat transport in semiconductor devices based on mesoscopic method

The effects of thermal behavior on nanoscale Metal Oxide Semiconductor Field Effect Transistor (nano-MOSFET) are still being studied by the semiconductor industry. This study investigates the heat diffusion inside double-gate (DG) and nano-conventional MOSFETs. Simulations of conventional and DG MOSFET are carried out using mesoscopic model lattice Boltzmann method (LBM) coupled with specularity parameter and convective heat transfer coefficient. The simulation results show that the specularity parameter and convective heat transfer term have important role to reduce hotspots in nano-devices. Temperature decreases when the specularity parameter and convective term increase. The temperature reaches 326.76 K for p = 0.1 while for p = 0.4 estimated 320.79 K at the same Rth−1=1010 W/(m2⋅K) in traditional device at t = 30 ps whereas the temperature in the double gate transistors reached 326.28 K and 321.48 K for p = 0.4 and 0.8, respectively. In addition, it is found that the conventional device compared with the double gate device is more heat stability.