神经形态工程学
电阻随机存取存储器
材料科学
光电子学
量子点
非易失性存储器
图层(电子)
异质结
记忆电阻器
纳米技术
计算机科学
电压
电子工程
电气工程
人工神经网络
机器学习
工程类
作者
Shin‐Yi Tang,Yu‐Chuan Shih,Ying‐Chun Shen,Ruei‐Hong Cyu,Chieh-Ting Chen,Tzu‐Yi Yang,Mayur Chaudhary,Yu‐Ren Peng,Y.C. Kuo,Wen‐Chien Miao,Yi‐Jen Yu,Ling Lee,Hao‐Chung Kuo,Yu‐Lun Chueh
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2024-03-11
卷期号:6 (3): 1581-1589
被引量:1
标识
DOI:10.1021/acsaelm.3c01274
摘要
Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nanoscale nonvolatile memory devices and neuromorphic computing applications. In this study, we developed a novel mixed-dimensional design for RRAM devices, incorporating zero-dimensional quantum dots (QDs), two-dimensional MoS2, and a TiO2 switching layer to achieve prominent interfacial switching behaviors. Compared with typical filamentary RRAM devices, the proposed heterostructure featured a light-sensitive QDs/MoS2 layer that allowed for bias-controllable resistive changes during the set and reset processes without abrupt switching. This was endowed by effective electron–hole pair separations upon excitation and the generation of a thin molybdenum oxide (MoOx) layer due to the accumulation of oxygen ions at the interface between MoS2 and TiO2. The ITO/QDs/MoS2/TiO2/Pt RRAM device exhibited an on/off ratio of 10 with improved endurance under 515 nm laser illumination and wavelength-dependent resistive switching behavior, making it useful for multilevel storage. Furthermore, the heterostructured device demonstrated synaptic characteristics with enhanced potentiation and depression nonlinearities and asymmetry factors, revealing its potential for future neuromorphic applications.
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