抖动
光电子学
击穿电压
近红外光谱
雪崩二极管
偏压
CMOS芯片
噪音(视频)
光电探测器
二极管
材料科学
红外线的
雪崩击穿
光子计数
硅
p-n结
单光子雪崩二极管
暗电流
探测器
物理
雪崩光电二极管
电压
光学
半导体
电气工程
量子力学
人工智能
计算机科学
图像(数学)
工程类
作者
Dajing Bian,Danlu Liu,Jie Dong,Feng Yuan,Yue Xu
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2023-12-28
卷期号:45 (3): 436-439
标识
DOI:10.1109/led.2023.3347277
摘要
A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) implemented in 180 nm Bipolar-CMOS-DMOS (BCD) technology is proposed. A deep P-type enrichment/high voltage N-Well (HVNW) junction is employed to enhance the NIR photon detection probability (PDP). Two lateral junctions are formed on both sides of the HVNW to further assist the NIR photon detection. Meanwhile, the P-type enrichment is surrounded by P-Well and a less-doped epitaxial layer to prevent premature breakdown and reduce dark count noise. It is experimentally demonstrated that a moderate breakdown voltage of ~ 20 V is obtained, which is suitable for the bias requirement of SPAD imaging arrays. At an excess bias of 5 V, the SPAD exhibits a peak PDP of 50% at 520 nm and a NIR PDP of 5.7% at 905 nm. At T = 27°C, it achieves a median dark count rate (DCR) of 0.41 cps/ $\mu \text{m}^{{2}}$ and afterpulsing probability < 0.1% with a dead time of 700 ns. The full width at half maximum jitter at 532 nm wavelength is 80 ps. This work provides a feasible solution for the design of near-infrared time-of-flight (ToF) detectors with high performance.
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