材料科学
压电
铋铁氧体
传感器
PMUT公司
超声波传感器
铋
超声波
铁氧体(磁铁)
电容式微机械超声换能器
光电子学
声学
复合材料
铁电性
冶金
多铁性
物理
电介质
作者
Tong Liu,Changhong Yang,Jingxiang Si,Wei Sun,Daojian Su,Chenglong Li,Xiufang Yuan,Shifeng Huang,Xin Cheng,Zhenxiang Cheng
标识
DOI:10.1002/adma.202414711
摘要
Abstract Piezoelectric micromachined ultrasound transducers (pMUTs), especially those using lead‐free materials, are crucial next‐generation microdevices for precise actuation and sensing, driving advancements in medical, industrial, and environmental applications. Bismuth ferrite (BiFeO 3 ) is emerging as a promising lead‐free piezoelectric material to replace Pb(Zr,Ti)O 3 in pMUTs. Despite its potential, the integration of BiFeO 3 thin films into pMUTs has been hindered by poling issues. Here, a BiFeO 3 heterostructure compositionally downgraded with Gd doping is developed to introduce compressive strain, resulting in strong self‐poling. Utilizing a large‐area self‐poled thin film over an entire 6‐inch wafer, a pMUT with a 6 × 6 array at the device level is designed and evaluated. At a resonant frequency of 21 kHz, the dynamic vibration displacement can reach 24.0 nm. At 500 Hz, far below the resonant frequency of 21 kHz, the pMUT also displays sensitive converse piezoelectric response, even at a high temperature of 200 °C. This work represents a significant breakthrough in lead‐free BiFeO 3 thin film for practical sensing applications, paving the way for the transformation of macro‐transducers into next‐generation functional microdevices.
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