A Nonlinear Mixed Finite Element Method for the Analysis of Flexoelectric Semiconductors

Abstract In this paper, we develop a nonlinear mixed finite element method for flexoelectric semiconductors and analyze the mechanically tuned redistributions of free carriers and electric currents through flexoelectric polarization in typical structures. We first present a macroscopic theory for flexoelectric semiconductors by combining flexoelectricity and nonlinear drift-diffusion theory. To use C0 continuous elements, we derive an incremental constrained weak form by introducing Langrage multipliers, in which the kinematic constraints between the displacement and its gradient are guaranteed. Based on the weak form, we established a mixed C0 continuous nine-node quadrilateral finite element as well as an iterative process for solving nonlinear boundary-value problems. The accuracy and convergence of the proposed element are validated by comparing linear finite element method results against analytical solutions for the bending of a beam. Finally, the nonlinear element method is applied to more complex problems, such as a circular ring, a plate with a hole, and an isosceles trapezoid. Results indicate that mechanical loads and doping levels have distinct influences on electric properties.