发光二极管
材料科学
量子点
钙钛矿(结构)
光电子学
二极管
离子
电场
亮度
量子力学
物理
光学
结晶学
有机化学
化学
作者
Po Lu,Min Lu,Fujun Zhang,Feisong Qin,Siqi Sun,Yù Zhang,William W. Yu,Xue Bai
出处
期刊:Nano Energy
[Elsevier]
日期:2023-01-14
卷期号:108: 108208-108208
被引量:17
标识
DOI:10.1016/j.nanoen.2023.108208
摘要
All-inorganic CsPbBrxI3−x perovskite quantum dots (PQDs) show great potential for pure-red light-emitting diodes (LEDs). However, spectral instability caused by ion migration at high electric fields and lower luminance limit its practical applications. Here, the ITO/ZnO/PEI/CsPbBrxI3−x PQDs/N, N, N-tris (4-(9-carbazolyl) phenyl) amine (TCTA) (3 nm)/1-bis [4-[N, N-di(4-tolyl)amino]-phenyl]-cyclohexane (TAPC)/MoO3/Au device structure is first designed to reduce the overall operating voltage of the device by enhancing hole injection and transport, effectively avoiding ion migration under high electric fields, and then by post-treating CsPbBrxI3−x PQDs with n-octylphosphonic acid: K to remove surface defects and increase the activation energy of halogen migration, further suppressing ion migration while improving the optical properties of the material. Ultimately, the color-stable pure-red perovskite LED achieved a high luminance of 13730 cd m−2 at voltages as low as 4.9 V and a maximum EQE of 16.7%.
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