电子
原子物理学
等离子体
离子
物理
蚀刻(微加工)
电子密度
材料科学
纳米技术
量子力学
图层(电子)
作者
Hyoungcheol Kwon,Felipe Iza,Imhee Won,Minkyung Lee,Songhee Han,Raseong Park,Yong‐Jin Kim,Dongyean Oh,Sung-Kye Park,Seon-Yong Cha
摘要
The formation of high-energy electrons and ion fluxes induced by an abnormal electron heating mode in asynchronous pulse-modulated plasma was investigated using particle-in-cell simulation. We demonstrate that the abnormally high electron heating mode was induced only for a short time in the asynchronous pulsed plasmas. Furthermore, enhanced production of energetic electrons accompanies this electron heating. In particular, the higher energy electrons (ε > 20 eV) are mainly produced by the abnormal electron heating during the first period of the abrupt sheath expansion phase in the asynchronous pulsed plasma with α1 = α3 = 0.05. These high-energy electrons are crucial for tailoring the expansion of plasma density and neutralizing the surface charging for the HARC etching process. A synergy of higher energy electrons and higher density ion fluxes in asynchronous pulsed plasma can be a promising solution to reduce statistical variation and charging-induced profile deterioration without the etch rate reduction in 3D NAND fabrication.
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