电子束光刻
平版印刷术
算法
阴极射线
GSM演进的增强数据速率
X射线光刻
电子
计算机科学
模版印刷
光学
抵抗
物理
材料科学
人工智能
纳米技术
量子力学
图层(电子)
作者
Wenze Yao,Hongcheng Xu,Haojie Zhao,Tao Ming,Jie Liu
标识
DOI:10.1016/j.mejo.2023.105718
摘要
This paper proposes a fast and accurate shape-based proximity effect correction (PEC) algorithm based on pattern edge shape adjustment (PESA) for electron beam lithography (EBL). By performing PEC calculations with three layout sizes (1 μm, 2 μm, and 4 μm) under three technology nodes (40 nm, 28 nm, and 14 nm), it is shown that the proposed PESA algorithm runs about 3–10 times faster than the traditional shape-based algorithm given that the mean square error (MSE) is less than 1%. The PESA's speed advantage is more obvious in more advanced technology node. Besides, PESA helps preventing fatal misconnection between local patterns in IC layouts. High stability and robustness of PESA algorithm are also demonstrated by the excellent convergence characteristics under different process critical dimensions (CD) and layout sizes. The proposed PESA algorithm has been integrated into the electronic design automation (EDA) tool for EBL -- "HNU-EBL" which is freely available at http://www.ebeam.com.cn.
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