Electronic sensitization enhanced p-type ammonia gas sensing of zinc doped MoS2/RGO composites

掺杂剂 兴奋剂 化学 异质结 石墨烯 二硫化钼 无机化学 化学工程 氧化物 纳米技术 材料科学 光电子学 有机化学 工程类
作者
Srinath Sibi,M. Rajkumar,Kamaraj Govindharaj,J. Mobika,V. Nithya Priya,R.T. Rajendra Kumar
出处
期刊:Analytica Chimica Acta [Elsevier BV]
卷期号:1248: 340932-340932 被引量:18
标识
DOI:10.1016/j.aca.2023.340932
摘要

Zinc (Zn) doping induced synergetic effects of defects engineering and heterojunction in Molybdenum disulphide/Reduced graphene oxide (MoS2/RGO) effectively enhances the p-type Volatile organic compounds (VOC) gas sensing traits and helps in tailoring the over dependence on noble metals for surface sensitization. Through this work, we have successfully prepared Zn doped MoS2 grafted on RGO employing an in-situ hydrothermal method. Optimal doping concentration of Zn dopants in the MoS2 lattice triggered more active sites on the basal plane of MoS2 with the aid of defects promoted by the zinc dopants. Effective intercalation of RGO further boost up the exposed surface area of Zn doped MoS2 for further interaction of ammonia gas molecules. Besides, smaller crystallite size brought out by 5% Zn dopants aids in efficient charge transfer across the heterojunctions that further amplifies the ammonia sensing traits with a peak response of 32.40% along with a response time of 21.3 s and recovery time of 44.90 s. The as prepared ammonia gas sensor exhibited excellent selectivity and repeatability. The obtained results reveal that transition metal doping into the host lattice proves to be a promising approach for VOC sensing characteristics of p-type gas sensors and gives insight about the importance of dopants and defects for the development of highly efficient gas sensors in the future.
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