电容器
低压差调节器
瞬态响应
回转率
物理
拓扑(电路)
瞬态(计算机编程)
CMOS芯片
电流(流体)
跌落电压
晶体管
电压
控制理论(社会学)
光电子学
材料科学
电气工程
电压调节器
工程类
计算机科学
人工智能
操作系统
热力学
量子力学
控制(管理)
作者
Nixiao Yan,Xin Zhang,Chunqi Shi,Leilei Huang,Mingyang Wang,Runxi Zhang
标识
DOI:10.1109/iccs56666.2022.9936586
摘要
This paper presents an output capacitor-less, dual power transistors low-dropout (LDO) regulator with ultra-low quiescent current in 55 nm CMOS process. The LDO employs an adaptive stage to make the LDO a two-stage topology at light load and a three-stage topology at heavy load. A co-enhanced transient circuit is introduced by adding the extra switching current to improve the slew rate without any quiescent current. The simulated results show that the LDO with a quiescent current of 12 nA and a power supply range from 2.5 to 3.6 V achieves a stable 1.2 V output. When the load current changes in steps of $10 \mu \mathrm{A} -20$ mA with a rise time and a fall time of 200 ns, the LDO can recover within 350 ns and 490 ns.
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