压电
材料科学
氮化物
制作
光电子学
铝
纳米技术
工程物理
复合材料
工程类
医学
病理
替代医学
图层(电子)
作者
Syed T. Haider,Muhammad Ali Shah,Duck-Gyu Lee,Shin Hur
出处
期刊:IEEE Access
[Institute of Electrical and Electronics Engineers]
日期:2023-01-01
卷期号:11: 58779-58795
被引量:15
标识
DOI:10.1109/access.2023.3276716
摘要
Piezoelectric materials have attracted considerable attention over the last two decades because many technologies utilize their core properties of piezoelectric materials. Previous applications consisted of bulk structures; however, a shift towards better performance and a more simplified and compatible fabrication method are required. Aluminum nitride (AlN) is a material that fits these criteria; it has a non-centrosymmetric crystal structure with a polarized c-axis and exhibits piezoelectric properties. Furthermore, it has an added benefit as the fabrication process of AIN is compatible with complementary metal–oxide semiconductor technology. This has led to a rapid increase in the adoption and interest in AlN-based devices. In this review, the crystal structure of AlN and its piezoelectric properties are compared with those of aluminum scandium nitride. Subsequently, functional devices such as consumer-based devices, telecommunication-based devices, industrial-related applications, and medical applications are presented. Finally, a summary and discussion of the future AlN research are presented.
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