纳米晶材料
铜
电解质
冶金
材料科学
无机化学
化学
化学工程
矿物学
纳米技术
电极
工程类
物理化学
标识
DOI:10.1179/0020296715z.000000000262
摘要
Copper is the presently favoured and future interconnect material in high-end microprocessors and memory devices because of its low electrical resistivity and higher electromigration than aluminium. The present investigation deals with the electrodeposition of nanocrystalline copper onto brass metallic foil from electrolytes containing copper sulphate (CuSO4·5H2O) as the source of metal ion and sulphuric acid (H2SO4). Benzotriazole (0.5 g L− 1) and sodium lauryl sulphate (0.1 g L− 1) were used as additives. The electrolyte was mechanically agitated and the temperature was maintained at 3°C ± 2°C. These additives have been found to be effective in reducing the grain size, grain boundaries and improving surface morphology of the copper films. They also improve the throwing power of the deposition electrolytes and hardness of deposits. X-ray diffraction (XRD) patterns obtained for the electrodeposited copper films showed polycrystalline cubic structure. The crystal size of the copper films was calculated by ...
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