Studies of material and process compatibility in developing compact silicon vapor chambers

The performance and long-term reliability of a silicon vapor chamber (SVC) developed for thermal management of high-power electronics critically depend on compatibility of the component materials. A hermetically sealed SVC presented in this paper is composed of bulk silicon, glass-frit as a bonding agent, lead/tin solder as an interface sealant and a copper charging tube. These materials, in the presence of a water/vapor environment, may chemically react and release noncondensable gas (NCG), which can weaken structural strength and degrade the heat transfer performance with time. The present work reports detailed studies on chemical compatibility of the components and potential solutions to avoid the resulting thermal performance degradation. Silicon surface oxidation and purification of operating liquid are necessary steps to reduce performance degradation in the transient period. A lead-based solder with its low reflow temperature is found to be electrochemically stable in water/vapor environment. High glazing temperature solidifies molecular bonding in glass-frit and mitigates PbO precipitation. Numerous liquid flushes guarantee removal of chemical residual after the charging tube is soldered to SVC. With these improvements on the SVC material and process compatibility, high effective thermal conductivity and steady heat transfer performance are obtained.