材料科学
等离子体
膜
六方氮化硼
氮化硼
带隙
氮化物
硼
分子
饱和(图论)
氢
六方晶系
纳米技术
化学工程
图层(电子)
光电子学
结晶学
石墨烯
有机化学
化学
量子力学
生物
工程类
遗传学
物理
组合数学
数学
作者
H. X. Zhang,Peter Feng
摘要
Few-layer rippled hexagonal boron nitride (h-BN) membranes were processed with hydrogen plasma, which exhibit distinct and pronounced changes in its electronic properties after the plasma treatment. The bandgaps of the h-BN membrane reduced from ∼5.6 eV at 0 s to ∼4.25 eV at 250s, which is a signature of transition from the insulating to the semiconductive regime. It typically required 250 s of plasma treatment to reach the saturation. It illustrates that two-dimensional material with engineered electronic properties can be created by attaching other atoms or molecules.
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