电负性
掺杂剂
阈值电压
材料科学
偶极子
场效应晶体管
兴奋剂
晶体管
价(化学)
凝聚态物理
金属浇口
原子物理学
光电子学
电压
化学
电气工程
栅氧化层
物理
有机化学
工程类
作者
P. D. Kirsch,P. Sivasubramani,Jimin Huang,Chadwin D. Young,Manuel Quevedo-López,H.C. Wen,Husam N. Alshareef,Kwang-Il Choi,C. S. Park,Kevin Freeman,Muhammad M. Hussain,G. Bersuker,H. R. Harris,P. Majhi,Rino Choi,P. Lysaght,B. H. Lee,Hsing‐Huang Tseng,R. Jammy,T. S. Böscke,Daniel J. Lichtenwalner,Jesse S. Jur,Angus I. Kingon
摘要
An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n-channel field effect transistors (nFETs) is proposed. Vt tuning depends on rare earth (RE) type and diffusion in Si∕SiOx∕HfSiON∕REOx/metal gated nFETs as follows: Sr<Er<Sc+Er<La<Sc<none. This Vt ordering is very similar to the trends in dopant electronegativity (EN) (dipole charge transfer) and ionic radius (r) (dipole separation) expected for a interfacial dipole mechanism. The resulting Vt dependence on RE dopant allows distinction between a dipole model (dependent on EN and r) and an oxygen vacancy model (dependent on valence).
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