The recovery effect of hot-carrier degradation under dynamic stress condition for SOI-nLDMOS device

The recovery effect of the hot-carrier degradation under the dynamic stress for the silicon-on-insulator n-type lateral DMOS (SOI-nLDMOS) was investigated in the paper. Based on the degradation of SOI-nLDMOS under the different duty cycle dynamic stress conditions, we found the serious recovery phenomenon. By further study, it was concluded that the de-trapping of hot-hole injecting into the bird's beak region occurred when the stress changed from low V _gs and high V _ds condition to high V _gs and low V _ds condition. Moreover, the charge pumping (CP) and the simulation results also verified the conclusion.