异质结
铜
溅射
材料科学
氧化物
氧化铜
开路电压
图层(电子)
太阳能电池
氧气
金属
光电子学
无机化学
薄膜
化学工程
化学
纳米技术
冶金
电压
物理
有机化学
量子力学
工程类
作者
J. Herion,E. A. Niekisch,G. Scharl
标识
DOI:10.1016/0165-1633(80)90022-2
摘要
ZnO/Cu2O heterojunction solar cells can be prepared by means of rf sputter deposition of Indoped ZnO layers on Cu2O. The temperature at which ZnO is deposited is found to be of crucial importance for the photovoltaic performance of the cells. Maxima of the open-circuit voltage, the short-circuit current, and the dark resistance are observed for deposition temperatures between 230 and 240°C. Auger sputter profiles show an oxygen depletion zone at the ZnO/Cu2O interface which can be attributed to a very thin copper layer. The oxygen depletion and, correspondingly, the copper enrichment are apparently correlated with the photovoltaic effects. A relatively small copper enrichment has also been observed in CuO/Cu2O cells. However, the nature of copper enrichment seems to be different in both types of cells.
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