响应度
红外线的
光探测
超晶格
探测器
光电子学
暗电流
红外探测器
光电探测器
光学
波长
材料科学
物理
远红外
作者
David Z. Ting,Cory J. Hill,Alexander Soibel,Sam A. Keo,Jason M. Mumolo,Jean Nguyen,Sarath D. Gunapala
摘要
We describe a long wavelength infrared detector where an InAs/GaSb superlattice absorber is surrounded by a pair of electron-blocking and hole-blocking unipolar barriers. A 9.9 μm cutoff device without antireflection coating based on this complementary barrier infrared detector design exhibits a responsivity of 1.5 A/W and a dark current density of 0.99×10−5 A/cm2 at 77 K under 0.2 V bias. The detector reaches 300 K background limited infrared photodetection (BLIP) operation at 87 K, with a black-body BLIP D∗ value of 1.1×1011 cm Hz1/2/W for f/2 optics under 0.2 V bias.
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