材料科学
光电导性
欧姆接触
光电子学
碳纳米管
肖特基二极管
肖特基势垒
硒
纳米技术
二极管
冶金
图层(电子)
作者
Peng Liu,Yurong Ma,Weiwei Cai,Zhenzhong Wang,Jian Wang,Limin Qi,Dongmin Chen
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2007-04-23
卷期号:18 (20): 205704-205704
被引量:53
标识
DOI:10.1088/0957-4484/18/20/205704
摘要
The photoconductivity of single-crystalline selenium nanotubes (SCSNTs) under a range of illumination intensities of a 633 nm laser is examined using a novel two-terminal device arrangement at room temperature. It is found that SCSNTs forms Schottky barriers with W and Au contacts, and the barrier height is a function of the light intensity. In the low-illumination regime below 1.46 × 10−4 µW µm−2, the Au–Se–W hybrid structure exhibits sharp on/off switching behaviour, and the turn-on voltages decrease with increasing illuminating intensities. In the high-illumination regime above 7 × 10−4 µW µm−2, the device exhibits ohmic conductance with a photoconductivity as high as 0.59 Ω cm−1, which is significantly higher than the reported values for carbon and GaN nanotubes. This finding suggests that a SCSNT is potentially a good photo-sensor material as well as a very effective solar cell material.
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