退火(玻璃)
硼
再结晶(地质)
材料科学
离子注入
分析化学(期刊)
化学计量学
氮气
硅
铝
电阻率和电导率
通量
结晶学
离子
冶金
化学
物理化学
有机化学
工程类
古生物学
色谱法
电气工程
生物
作者
S. R. Seshadri,G.W. Eldridge,Anant Agarwal
摘要
Room temperature free carrier concentrations exceeding 1×1018 cm−1 have been achieved with 1000 °C implants into 4H–SiC using N and Al (1×1017 cm−3 using B). A decrease in resistivity is observed for annealing temperatures above ∼1300, ∼1500, and ∼1750 °C for N, Al, and B, respectively. Rutherford backscattering spectroscopy measurements indicate almost complete recrystallization for N-implanted samples and partial recrystallization on the silicon, but not the carbon, sublattice for B- and Al-implanted samples. An implant and species related step formation is also observed. Only boron is observed to diffuse appreciably. A crystal stoichiometry and Fermi level dependent model is proposed to explain the activation results.
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