噪声系数
宽带
基带
阻抗匹配
带宽(计算)
电子工程
电气工程
放大器
低噪声放大器
带宽扩展
CMOS芯片
电阻式触摸屏
作者
Erez Zolkov,Emanuel Cohen
出处
期刊:IEEE solid-state circuits letters
[Institute of Electrical and Electronics Engineers]
日期:2021-06-03
卷期号:4: 109-112
标识
DOI:10.1109/lssc.2021.3085902
摘要
A mixer-first receiver (RX) with enhanced matching bandwidth (BW) is proposed. The enhanced matching BW is achieved by exploiting the input reactance (negative capacitance) exhibited in resistive feedback voltage-voltage low-noise amplifiers (LNAs), to create a second-order baseband impedance without any power or noise penalty. The technique is analyzed based on a linear time-invariant (LTI) model. An integrated 8-phase mixer-first RX prototype was fabricated in the TSMC 65-nm CMOS process as a proof of concept. The RX is capable of broadband operation and achieves wideband <; -10-dB matching of 40 MHz, with 36-dB RX gain, noise figure (NF) of 2.2-4.2 dB, B1dB of 14.5 dBm, out-of-band (OOB) IIP3 of 33 dBm, and 1-dB NF degradation for 5-dBm blocker power, at a frequency range of 0.5-2 GHz.
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