CMOS芯片
合并(版本控制)
图像传感器
植入
计算机视觉
电子工程
像素
计算机科学
人工智能
工程类
医学
外科
情报检索
出处
期刊:China Semiconductor Technology International Conference
日期:2021-03-14
标识
DOI:10.1109/cstic52283.2021.9461549
摘要
In this study, several ion implant condition was applied in Dual conversion gain CMOS image sensor for improving pixel performance. ISO and N3V implant condition, including energy and dosage, was discussed when P-well merge. Meanwhile, ISO process wad moved front before poly. WAT Test and Black white CP test were used to characterize pixel performance of DCG-CMOS. Device ITP and mobility chart showed the logical function working. Black dot improved approximately 40% while RTS noise get worse.
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