带隙
材料科学
钙钛矿(结构)
卤化物
铅(地质)
光伏
直接和间接带隙
纳米技术
光电子学
化学
无机化学
结晶学
地貌学
地质学
生态学
光伏系统
生物
作者
Shaohua Yu,Jin Xu,Xiaoying Shang,En Ma,Fulin Lin,Wei Zheng,Datao Tu,Renfu Li,Xueyuan Chen
出处
期刊:Advanced Science
[Wiley]
日期:2021-08-11
卷期号:8 (19): e2100084-e2100084
被引量:48
标识
DOI:10.1002/advs.202100084
摘要
Abstract Understanding the origin of temperature‐dependent bandgap in inorganic lead‐halide perovskites is essential and important for their applications in photovoltaics and optoelectronics. Herein, it is found that the temperature dependence of bandgap in CsPbBr 3 perovskites is variable with material dimensionality. In contrast to the monotonous redshift ordinarily observed in bulk‐like CsPbBr 3 nanocrystals (NCs), the bandgap of 2D CsPbBr 3 nanoplatelets (NPLs) exhibits an initial blueshift then redshift trend with decreasing temperature (290–10 K). The Bose–Einstein two‐oscillator modeling manifests that the blueshift‐redshift crossover of bandgap in the NPLs is attributed to the significantly larger weight of contribution from electron‐optical phonon interaction to the bandgap renormalization in the NPLs than in the NCs. These new findings may gain deep insights into the origin of bandgap shift with temperature for both fundamentals and applications of perovskite semiconductor materials.
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