光刻胶
光刻
材料科学
聚合物
烷基
侧链
叠氮化物
有机电子学
光电子学
晶体管
纳米技术
电压
化学
有机化学
复合材料
电气工程
工程类
图层(电子)
作者
Chenying Gao,Dandan Shi,Cheng Li,Xiaobo Yu,Xi‐Sha Zhang,Zitong Liu,Guanxin Zhang,Deqing Zhang
标识
DOI:10.1002/advs.202106087
摘要
Abstract Molecular systems that can function as photoresists are essential for the fabrication of flexible electronics through all‐photolithographic processes. Most of the reported molecular systems for photo‐patterning of polymeric semiconductors contain binary or multi‐components. In comparison, single component semiconducting photoresist is advantageous since it will circumvent the optimization of phase separation and ensure the patterned semiconducting thin films to be more uniform. In this paper, a single component semiconducting photoresist (PDPP4T‐N 3 ) by incorporating azide groups into the branching alkyl chains of a diketopyrrolopyrrole‐based conjugated polymer is reported. The results reveal that i) the azide groups make the side chains to be photo‐cross‐linkable; ii) uniform patterns with size as small as 5 µm form under mild UV irradiation (365 nm, 85 mW cm −2 ) at ambient conditions; iii) such photo‐induced cross‐linking does not affect the inter‐chain packing; iv) benefiting from the single component feature, field‐effect transistors (FETs) with the individual patterned thin films display satisfactorily uniform performances with average charge mobility of 0.61 ± 0.10 cm 2 V –1 s –1 and threshold voltage of 3.49 ± 1.43 V. These results offer a simple yet effective design strategy for high‐performance single component semiconducting photoresists, which hold great potentials for flexible electronics processed by all‐photolithography.
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