阴极发光
发光
材料科学
辐照
兴奋剂
分析化学(期刊)
热释光
大气温度范围
持续发光
辐射传输
质子
猝灭(荧光)
原子物理学
荧光
光电子学
化学
光学
物理
核物理学
气象学
色谱法
作者
Sushrut Modak,Leonid Chernyak,Alfons Schulte,Minghan Xian,F. Ren,S. J. Pearton,A. Ruzin,S. S. Kosolobov,Vladimir P. Drachev
出处
期刊:AIP Advances
[American Institute of Physics]
日期:2021-12-01
卷期号:11 (12)
被引量:9
摘要
Temperature dependent continuous and time-resolved cathodoluminescence measurements were employed to understand the luminescence from Si-doped β-Ga2O3 prior to irradiation and after 10 MeV proton and 18 MeV alpha-particle irradiation. The shape and location of the luminescence components [ultraviolet luminescence (UVL′) at 3.63 eV, UVL at 3.3 eV, and blue-luminescence at 2.96 eV] obtained from Gaussian decomposition did not change in either width or peak location, indicating that new radiation-induced trap-levels were non-radiative in nature between the 4.5 and 310 K temperature range. Activation energies, associated with thermal quenching of UVL′ and UVL bands, show temperature dependence, suggesting ionization of shallow Si-donors and a thermally activated non-radiative process.
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