异质结
双极扩散
材料科学
光电子学
光电二极管
光电探测器
纳米线
纳米技术
电子
物理
量子力学
作者
Wei Wang,Weijun Wang,You Meng,Quan Quan,Zhengxun Lai,Dengji Li,Pengshan Xie,SenPo Yip,Xiaolin Kang,Xiuming Bu,Dong Chen,Chuntai Liu,Johnny C. Ho
出处
期刊:ACS Nano
[American Chemical Society]
日期:2022-06-27
卷期号:16 (7): 11036-11048
被引量:31
标识
DOI:10.1021/acsnano.2c03673
摘要
The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS2 nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 104, fast response of 50 μs, and high detectivity of 1.64 × 1011 Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.
科研通智能强力驱动
Strongly Powered by AbleSci AI