电阻随机存取存储器
数据保留
非易失性存储器
计算机科学
闪存
随机存取
半导体存储器
随机存取存储器
大数据
电气工程
工程类
嵌入式系统
计算机硬件
计算机网络
操作系统
计算机安全
电压
作者
Anurag Pritam,Rajesh Gupta,Prakash Mondal
出处
期刊:Cornell University - arXiv
日期:2022-05-02
标识
DOI:10.48550/arxiv.2205.05537
摘要
Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy efficient and have an exception data retention period. Among several existing memory technologies, resistive random-access memory (RRAM) is an answer to the above question as it is necessary to possess the combination of speed of RAM and nonvolatility, thus proving to be one of the most promising candidates to replace flash memory in next-generation non-volatile RAM applications. This review discusses the existing challenges and technological advancements made with RRAM, including switching mechanism, device structure, endurance, fatigue resistance, data retention period, and mechanism of resistive switching in inorganic oxides material used as a dielectric layer. Finally, a summary and a perspective on future research are presented.
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