电容
二极管
光电子学
扩散
材料科学
激光器
扩散电容
半导体激光器理论
微分电容
电气工程
光学
物理
工程类
电极
热力学
量子力学
作者
John Strologas,Karl Hess
标识
DOI:10.1109/ted.2003.822345
摘要
The well-known diffusion capacitance is critical in determining the modulation response of p-n junctions and particularly of laser diodes. In this brief, we investigate the diffusion capacitance of a diode, as a function of the physical length of the diode and the carrier lifetimes in the narrow active region. We show that diode length and lifetime together, and not just the lifetime (which is well known), determine the bandwidth of the diode.
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