SEE in a 0.15 /spl mu/m fully depleted CMOS/SOI commercial Process

We evaluated single-event effects (SEEs) in test circuits fabricated at OKI with their 0.15 /spl mu/m Fully Depleted CMOS/SOI commercial process. The sample devices were designed with hardness-by design (HBD) methodology. The results are discussed for an effective hardening design associated with SEEs.