Atom(片上系统)
材料科学
薄膜
溅射沉积
微观结构
溅射
沉积(地质)
相(物质)
基质(水族馆)
原子物理学
化学
复合材料
纳米技术
物理
地质学
海洋学
嵌入式系统
古生物学
有机化学
计算机科学
沉积物
作者
Jinjiao Xia,Wenping Liang,Qiang Miao,Diederik Depla
标识
DOI:10.1016/j.apsusc.2017.12.205
摘要
The influence of the ratio between the energy and the deposition flux, or the energy per arriving atom, on the growth of Y2O3 sputter deposited thin films has been studied. The energy per arriving atom has been varied by the adjustment of the discharge power, and/or the target-to-substrate distance. The relationship between the energy per arriving atom and the phase evolution, grain size, microstructure, packing density and residual stress was investigated in detail. At low energy per arriving atom, the films consist of the monoclinic B phase with a preferential (1 1 1) orientation. A minority cubic C phase appears at higher energy per arriving atom. A study of the thin film cross sections showed for all films straight columns throughout the thickness, typically for a zone II microstructure. The intrinsic stress is compressive, and increases with increasing energy per atom. The same trend is observed for the film density. Simulations show that the momentum transfer per arriving atom also scales with the energy per arriving atom. Hence, the interpretation of the observed trends as a function of the energy per arriving atom must be treated with care.
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