Electrochemical Degradation Mechanism of Transparent Conductive Indium Tin Oxide Film in HCl Solution

材料科学 腐蚀 氧化铟锡 介电谱 扫描电子显微镜 溶解 电化学 氧化物 极化(电化学) 化学工程 电导率 氧化锡 冶金 复合材料 薄膜 纳米技术 电极 化学 物理化学 工程类
作者
Hina Farooq,Jae‐Yeon Kim,Jai-Won Byeon
出处
期刊:Sinloeseong eung'yong yeon'gu [The Korean Reliability Society]
卷期号:19 (2): 185-192 被引量:1
标识
DOI:10.33162/jar.2019.06.19.2.185
摘要

Purpose: In order to offer a better understanding of the root causes of the electrochemical corrosion failure of indium tin oxide (ITO), the degradation mechanism was investigated with specific attention to changes in chemical composition and the crystalline phase, and then correlated with electrical resistance and optical transparency of the ITO film.BRMethods: An electrochemical polarization test was carried out in 1M HCl solution. For the interrupted specimens after specific corrosion times, various analytical characterizations were performed including scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, electrical resistance, and optical transmittance.BRResults: The polarization curve was divided into four distinct stages based on the varying electrochemical behaviors and the resulting changes in morphology/phase evolution were investigated. ITO film was corroded by breaking of In-O bonds followed by reduction of In3+ and Sn2+ ions. The reaction terminated with the formation of In-Cl particles as byproducts of corrosion. Electrical conductivity decreased abruptly with the dissolution of ITO film, and 5–10% variation in optical transparency of the ITO film was also recorded in response to the electrochemical activity.BRConclusion: Based on the chemical composition and phase analysis for the interrupted specimens at specific stages, the electrochemical corrosion mechanism was proposed, and this material degradation mechanism was correlated with that of the electrical resistance and optical conductivity, respectively.
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