Thin‐Film PECVD (AKT)

Plasma-enhanced chemical vapor deposition (PECVD) method is widely used for thin-film deposition of insulating and semiconducting layers in thin-film transistors (TFT) for active-matrix liquid-crystal display (AMLCD) and active-matrix organic light-emitting diode (AMOLED) displays. The basic guideline for scaling up PECVD processes generation to generation has been to maintain the same intensive deposition parameters, such as substrate temperature, deposition pressure, and electrode spacing, while somewhat proportionally increasing the extensive deposition parameters such as radio frequency (RF) power and gas flow rate. All modern PECVD chambers are also equipped with in situ dry cleaning capability in the form of a remote plasma source cleaning (RPSC) unit. RPSC technology created a second productivity revolution in mass production PECVD tools due to further improvements in particles and yield performance, as well as enabling a longer lifetime of process chamber components such as diffusers and susceptors.