拉曼光谱
铁电性
结晶学
材料科学
晶体结构
纳米技术
压电响应力显微镜
透射电子显微镜
原子单位
扫描透射电子显微镜
化学物理
化学
光电子学
光学
物理
电介质
量子力学
作者
Lixuan Liu,Jiyu Dong,Junquan Huang,Anmin Nie,Kun Zhai,Jianyong Xiang,Bochong Wang,Fusheng Wen,Congpu Mu,Zhisheng Zhao,Yongji Gong,Yongjun Tian,Zhongyuan Liu
标识
DOI:10.1021/acs.chemmater.9b03499
摘要
The structures of the various phases endow In2Se3 unique properties as well as a broad range of potential applications. However, the controversy on the structures of In2Se3 strongly hinders the exploitation of its properties and potentially gives rise to misdirection of its applications. Here, taking advantage of state-of-the-art aberration-corrected scanning transmission electron microscopy, we demonstrate the atomic-scale structures of lab-created and purchased In2Se3 compounds. Six phases in three polymorphs at room temperature have been observed among all the samples, which include 2H and 3R α-In2Se3, 1T, 2H, and 3R β-In2Se3, and none-layered γ-In2Se3. Raman spectra are directly correlated to individual In2Se3 phases, providing fingerprints for identifying various phases of In2Se3. In addition, obvious out-of-plane ferroelectricity of 2H α-In2Se3 was also observed by piezoresponse force microscopy, enabling its potential application in ferroelectric devices.
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