Optimization of crucible and heating model for large-sized silicon carbide ingot growth in top-seeded solution growth

In this paper, a new crystal growth model for top-seeded solution growth (TSSG) was established by improving the shape of the crucible and using a heating system. The simulation results show that a relatively stable growth of large-sized (4-in.) silicon carbide ingots can be achieved by the reasonable design of the crucible dimensions, H1 and L1. This new system also has excellent potential for using TSSG to grow 6-inch crystals. Besides, more attention should be paid to the edge growth of the seed, which plays a crucial role in further improving the stability of crystal growth.