瞬态响应
回转率
电容
瞬态(计算机编程)
超调(微波通信)
CMOS芯片
低压差调节器
控制理论(社会学)
跌落电压
电压
偏压
电压调节器
电子工程
物理
工程类
电气工程
计算机科学
电极
操作系统
量子力学
人工智能
控制(管理)
作者
Yang Li,Hua Fan,Quanyuan Feng,Q. Hu,Lang Hu,Hao Chen,Hadi Heidari
标识
DOI:10.1109/icecs49266.2020.9294867
摘要
In this paper, a low drop-out (LDO) linear regulator with high power supply rejection ratio(PSR) and fast transient response is proposed for various applications. To achieve fast transient response, this work employs variable bias and transient-boost capacitance. The variable bias structure enhance the slew rate and PSR of LDO. The transient-boost capacitance (TBC) is set in a proper location, using its voltage characteristic to enhance transient response without consuming quiescent current, and it also improves circuit's stability. This circuit is designed based on TSMC 65nm CMOS Technology and verified by Cadence simulation environment. According to the simulation results, the LDO achieves a PSR of 68.3dB and 51.4dB at 10kHz and 1MHz. Undershoot and overshoot of Vout are 190mV and 143mV under a varying load current from 20mA to 80mA with edge time of 1ns.
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