High‐Speed Spatial Atomic‐Layer Deposition of Aluminum Oxide Layers for Solar Cell Passivation

Al2O3 thin films deposited at rates as high as 1.2 nm s−1 using spatially separated atomic layer deposition show excellent solar cell surface passivation properties, i.e., recombination velocities of <2 cm s−1. This disruptive ALD concept opens the way for cost-effective manufacturing with high industrial throughput numbers.