比较器
CMOS芯片
逐次逼近ADC
电容器
电容感应
电气工程
电子工程
偏移量(计算机科学)
计算机科学
电压
工程类
程序设计语言
作者
Lukas Kull,Thomas Toifl,M. Schmatz,Pier Andrea Francese,Christian Menolfi,Matthias Braendli,Marcel Kossel,Thomas Morf,Tom Løgstrup Andersen,Yusuf Leblebici
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2013-12-01
卷期号:48 (12): 3049-3058
被引量:222
标识
DOI:10.1109/jssc.2013.2279571
摘要
An 8b 1.2 GS/s single-channel Successive Approximation Register (SAR) ADC is implemented in 32 nm CMOS, achieving 39.3 dB SNDR and a Figure-of-Merit (FoM) of 34 fJ per conversion step. High-speed operation is achieved by converting each sample with two alternate comparators clocked asynchronously and a redundant capacitive DAC with constant common mode to improve the accuracy of the comparator. A low-power, clocked capacitive reference buffer is used, and fractional reference voltages are provided to reduce the number of unit capacitors in the capacitive DAC (CDAC). The ADC stacks the CDAC with the reference capacitor to reduce the area and enhance the settling speed. Background calibration of comparator offset is implemented. The ADC consumes 3.1 mW from a 1 V supply and occupies 0.0015 mm 2 .
科研通智能强力驱动
Strongly Powered by AbleSci AI