Covalent Grafting of Dielectric Films on Cu(111) Surface via Electrochemical Reduction of Aryl Diazonium Salts

Covalent grafting of dielectric films containing polyhedral oligomeric silsesquioxane (POSS) on the surface of Cu(111) is performed by a one-step electrochemical reduction of diazonium salts. This method is efficient and economic and performs in a proton-polar solvent of deionized water and tetrahydrofuran (THF), where the monomer employs an octavinylsilsesquioxane (OVS) containing a POSS core. The eight vinyl bonds contained in OVS are used to participate in aryl radical-initiated polymerization reactions to form films. The formed film is dense and covers the copper surface completely and uniformly. The thickness of the film can be controlled by adjusting the reaction time. The components of the films are mainly polynitrophenyl (PNP) or polyaminophenyl (PAP) as well as poly(octavinylsilsesquioxane) (POVS), and the POVS content could be adjusted by the applied voltage. The introduction of POSS prevents the copper surface from being oxidized and often gives the film good properties such as good dielectric properties, mechanical properties, and thermal properties. In addition, the presence of Cu-O-C and Cu-C bonds between the film and copper interface is confirmed at different film thicknesses by X-ray photoelectron spectroscopy (XPS), which allowed the construction of covalent bonds between metal and nonmetal, further enhancing the bonding between the film and copper. Organic films prepared by electrochemical reduction of diazonium salts using OVS as a monomer will have potential significance for the future development of the electronics industry.