Electrical Transport Properties of Layered Black Phosphorus grown by Chemical Vapor Transport

Abstract This work investigates the transport properties of layered black phosphorus (BP) grown by the chemical vapor transport (CVT). The electrical measurements are carried out at a temperature ranging from 300 to 2 K and a magnetic field up to 16 Tesla. The CVT‐grown BP exhibits p‐type conduction with an acceptor's 14–1.2 meV activation energy. The concentration of ionized acceptors is Moreover, the Hall mobility is found to be 138 cm 2 V −1 s −1 and 4 × 10 4 cm 2 V −1 s −1 , respectively, at room temperature and 2 K. This work reveals the potential of CVT synthesis as a simple, nontoxic, and cheap technique to make high‐quality BP crystals with high carrier mobility ready as a solid foundation for BP single‐crystal application.