自旋电子学
材料科学
范德瓦尔斯力
塞贝克系数
烷基
图层(电子)
联轴节(管道)
纳米技术
数码产品
带隙
电荷(物理)
热电效应
表面改性
光电子学
化学物理
凝聚态物理
化学
分子
热导率
有机化学
物理
复合材料
物理化学
热力学
铁磁性
量子力学
作者
Lu Yang,Yingying Zhang,Chi‐Yuan Yang,Sergio Revuelta,Haoyuan Qi,Chuanhui Huang,Wen‐Long Jin,Zichao Li,Víctor Vega-Mayoral,Yannan Liu,Xing Huang,Darius Pohl,Miroslav Položij,Shengqiang Zhou,Enrique Cánovas,Thomas Heine,Simone Fabiano,Xinliang Feng,Renhao Dong⧫
标识
DOI:10.1038/s41467-022-34820-6
摘要
Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) have attracted increasing interests for (opto)-electronics and spintronics. They generally consist of van der Waals stacked layers and exhibit layer-depended electronic properties. While considerable efforts have been made to regulate the charge transport within a layer, precise control of electronic coupling between layers has not yet been achieved. Herein, we report a strategy to precisely tune interlayer charge transport in 2D c-MOFs via side-chain induced control of the layer spacing. We design hexaiminotriindole ligands allowing programmed functionalization with tailored alkyl chains (HATI_CX, X = 1,3,4; X refers to the carbon numbers of the alkyl chains) for the synthesis of semiconducting Ni3(HATI_CX)2. The layer spacing of these MOFs can be precisely varied from 3.40 to 3.70 Å, leading to widened band gap, suppressed carrier mobilities, and significant improvement of the Seebeck coefficient. With this demonstration, we further achieve a record-high thermoelectric power factor of 68 ± 3 nW m-1 K-2 in Ni3(HATI_C3)2, superior to the reported holes-dominated MOFs.
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