X射线光电子能谱
等离子体增强化学气相沉积
化学气相沉积
材料科学
氮化硅
分析化学(期刊)
薄膜
傅里叶变换红外光谱
蚀刻(微加工)
氮化物
红外光谱学
退火(玻璃)
硅
化学工程
化学
纳米技术
复合材料
光电子学
图层(电子)
有机化学
工程类
作者
M.L. Barcellona,Orazio Samperi,D.O. Russo,A. Battaglia,D. Fischer,Maria Elena Fragalà
标识
DOI:10.1016/j.matchemphys.2023.128023
摘要
Hydrogenated silicon nitride (SiNx:H) thin films are deposited by plasma-enhanced chemical vapor deposition (PECVD) using different gas mixtures of SiH4+NH3+N2 or SiH4+N2 and plasmas conditions. Resulting differences in terms of overall film composition are herein associated with wet etch rate (WER) in hydrofluoric acid (HF). Different acid concentrations, as well as etching temperatures, have been investigated and it is demonstrated that not only hydrogen but also the oxygen content of nitride have a strong impact on film chemical resistivity. The role of annealing of nitride layers is also studied in terms of wet etching response and further elucidates the role of crystalline structure and chemical evolution of oxidized components on HF nucleophilic attack mechanism. Samples have been characterized by Field Emission-Scanning Electron Microscopy (FE-SEM), X-rays Photoelectron Spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FT-IR), and X-Ray Diffraction (XRD). The WER is measured by implementing a fast and straightforward FT-IR data treatment.
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