过电位
催化作用
惰性
解吸
材料科学
GSM演进的增强数据速率
氢
吸附
化学工程
纳米技术
化学
物理化学
电化学
计算机科学
有机化学
工程类
电信
电极
作者
Yongzhi Zheng,Qinqin Zhou,Hexiong Liu,Wenyuan Zhou,Peng Hu,Jinshu Wang
标识
DOI:10.1016/j.ijhydene.2023.05.139
摘要
In this work, a surface engineering strategy has been developed to implant atomic Ni mostly enriched in 1 nm thickness of MoS2 nanosheets, and suppresses the segregation of undesired NiSx. Notably, this structural regulation not only creates additional edges exposed at the inert basal plane of MoS2 nanosheets, but also increases the catalytic ability of edge sites by forming dominant NiMoS phase. As such, a low overpotential of 95 mV is achieved to deliver a current density of 10 mA cm−2, which is 242 mV decrease than unmodified MoS2, together with 86.5% preservation of initial capacity after 100 h test. Theoretical calculations further identify the activated catalytic sites both in Mo-edge and S-edge, and the specific atomic configurations enable the synergistic effect to optimize the adsorption-desorption of H∗, and is responsible for the remarkably improved hydrogen evolution reaction (HER) activity.
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