材料科学
光电探测器
三元运算
暗电流
宽带
光电子学
比探测率
光学
物理
计算机科学
程序设计语言
作者
Congdi Xu,Peng Liu,Chuang Feng,Zhicai He,Yong Cao
摘要
OPDs with ultra-low dark current density and high detectivity are developed via interfacial and morphological modifications in the ternary device. A highest D* at 1060 nm exceeding 8.2 × 10 12 Jones is achieved with fast response and wide LDR.
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