Quantifying Nonradiative Recombination and Resistive Losses in Perovskite Photovoltaics: A Modified Diode Model Approach

Pinpointing the origin of inefficiency can expedite the process of optimizing the efficiency of perovskite photovoltaics. However, it is challenging to discern and quantify the different loss pathways in a complete perovskite photovoltaic device under operational conditions. To address this challenge, a modified diode (MD) model is proposed that can quantify bulk/interface defect‐assisted recombination and series/shunt resistive losses. By adopting drift‐diffusion simulation as the benchmark, the physical meanings of the MD model parameters are explored and the performance of the model for simulation parameters spanning many orders of magnitude is evaluated. The evaluation shows that in most practical cases, the proposed model can accurately quantify all the aforementioned losses, and in some special cases, it is possible to identify the predominant loss pathway. Moreover, the MD model is applied to lab‐produced devices (based on Cs 0.05 FA 0.95 PbI 3 perovskites), demonstrating its effectiveness in quantifying entangled losses in practice. Finally, a set of guidelines for applying the MD model and interpreting the results is provided.