Dielectric response and current-voltage characteristic of Mo-doped diamond-like carbon thin films at room temperature

Herein we have reported the effect of molybdenum (Mo) doping and acetylene (C2H2) gas flow rate, during deposition, on the electrical properties of diamond like carbon (DLC) films. The frequency dependent dielectric response of the undoped and doped DLC films has been discussed in details. Mo doping also increases the dielectric constant value owing to interfacial polarization and the corresponding change with C2H2 gas flow rate has been attributed to the formation of sp2 bonding over sp3 bonding, favoring the emergence of a graphite-like phase. The ac conductivity of DLC films has been observed to increase with frequency following a power law behavior. However, with 29 % Mo doping we have noticed two plateau regions having different slopes which has been explained on the basis of the jump relaxation model (JRM). The theoretical fitting of the experimental data indicates occurrence of ionic conduction along with polaron hoping. The dc contribution part (σdc) of the measured ac conductivity is found to vary with the acetylene (C2H2) gas flow dependent sp2 bonding formation. The σdc is extracted to be 2351 S/m for the 29 % Mo doped DLC films. From the Nyquist plot in impedance spectroscopy single relaxation phenomena have been observed for the no or low Mo doping but with 29 % Mo doping both the grain and grain boundary effect are prominent. This also suggests the presence of sp2 hybridization and formation of dangling bonds between the metal carbide and DLC film. From the current voltage characteristics, the development of high sp2 bonding and high electron injection into the DLC matrix with subsequent change in nature of the DLC from semiconducting to metallic with high Mo doping has been reported. From the capacitance voltage characteristics study it has been found that either increase in acetylene gas flow during deposition or Mo doping increases the space charge and trap carrier densities.