锡
钙钛矿(结构)
材料科学
光电子学
兴奋剂
波段图
带隙
表面光电压
载流子
光伏系统
纳米技术
化学
光谱学
物理
结晶学
电气工程
量子力学
冶金
工程类
作者
Mahmoud H. Aldamasy,Artem Musiienko,M. Rusu,Shengnan Zho,Hannes Hampel,Chiara Frasca,Zafar Iqbal,Thomas Gries,Guixiang Li,Ece Aktas,Giuseppe Nasti,Meng Li,Jorge Pascual,Noor Titan Putri Hartono,Qiong Wang,Thomas Unold,Antonio Abate
出处
期刊:Cornell University - arXiv
日期:2023-09-11
被引量:1
标识
DOI:10.48550/arxiv.2309.05481
摘要
Tin perovskites are the most promising environmentally friendly alternative to lead perovskites. Among tin perovskites, FASnI3 (CH4N2SnI3) shows optimum band gap, and easy processability. However, the performance of FASnI3 based solar cells is incomparable to lead perovskites for several reasons, including energy band mismatch between the perovskite absorber film and the charge transporting layers (CTLs) for both types of carriers, i.e., for electrons (ETLs) and holes (HTLs). However, the band diagrams in the literature are inconsistent, and the charge extraction dynamics are poorly understood. In this paper, we study the energy band positions of FASnI3 based perovskites using Kelvin probe (KP) and photoelectron yield spectroscopy (PYS) to provide a precise band diagram of the most used device stack. In addition, we analyze the defects within the current energetic landscape of tin perovskites. We uncover the role of bathocuproine (BCP) in enhancing the electron extraction at the fullerene C60/BCP interface. Furthermore, we used transient surface photovoltage (tr-SPV) for the first time for tin perovskites to understand the charge extraction dynamics of the most reported HTLs such as NiOx and PEDOT, and ETLs such as C60, ICBA, and PCBM. Finally, we used Hall effect, KP, and time-resolved photoluminescence (TRPL) to estimate an accurate value of the p-doping concentration in FASnI3 and showed a consistent result of 1.5 * 1017 cm-3. Our findings prove that the energetic system of tin halide perovskites is deformed and should be redesigned independently from lead perovskites to unlock the full potential of tin perovskites.
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